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Journal Articles

Tensile properties of austenitic stainless steels irradiated at SINQ target 3

Saito, Shigeru; Kikuchi, Kenji; Usami, Koji; Ishikawa, Akiyoshi; Nishino, Yasuharu; Kawai, Masayoshi*; Dai, Y.*

Journal of Nuclear Materials, 343(1-3), p.253 - 261, 2005/08

 Times Cited Count:9 Percentile:53.19(Materials Science, Multidisciplinary)

A beam window of a spallation target will be subjected to proton/neutron irradiation, pressure wave and thermal stresses accompanied by high-energy proton beam injection. To obtain the irradiation data, the SINQ target irradiation program (STIP) was initiated in 1996 at Paul Scherrer Institute (PSI) and has been progressing. JAERI takes part in STIP and shares the PIE work. In this study, the results of tensile tests on austenitic stainless steels, JPCA and 316F SS, will be reported. The results indicate that the irradiation causes considerable hardening and degradation of ductility. The YS increases in this study are slightly large in comparison with those irradiated at fission reactor. Strain-to-necking (STN) values show sufficient large ductility of the irradiated JPCA-SA and 316F-SA. The trends of the STN decrease in this study are slightly abrupt in comparison with those irradiated at fission reactor. All specimens, including irradiated at embrittlement temperature for austenitic steels, fractured in ductile manner.

Journal Articles

Comprehensive study on layout dependence of soft errors in CMOS latch circuits and its scaling trend for 65 nm technology node and beyond

Fukui, Hironobu*; Hamaguchi, Masafumi*; Yoshimura, Hisao*; Oyamatsu, Hisato*; Matsuoka, Fumitomo*; Noguchi, Tatsuo*; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Yamakawa, Takeshi; et al.

Proceedings of 2005 Symposia on VLSI Technology and Circuits, p.222 - 223, 2005/00

no abstracts in English

Journal Articles

Bulk damage observed in recent LSI devices

Shindo, Hiroyuki*; Kuboyama, Satoshi*; Ikeda, Naomi*; Otomo, Hiromitsu*; Shimada, Osamu*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.63 - 66, 2004/10

no abstracts in English

Journal Articles

Study on proton-induced single event upset in Sub-0.1$$mu$$m CMOS LSIs

Fukui, Hironobu*; Hamaguchi, Masafumi*; Yoshimura, Hisao*; Oyamatsu, Hisato*; Matsuoka, Fumitomo*; Noguchi, Tatsuo*; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Yamakawa, Takeshi; et al.

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.169 - 172, 2004/10

no abstracts in English

Journal Articles

Bend-fatigue properties of 590 MeV proton irradiated JPCA and 316F SS

Saito, Shigeru; Kikuchi, Kenji; Usami, Koji; Ishikawa, Akiyoshi; Nishino, Yasuharu; Kawai, Masayoshi*; Dai, Y.*

Journal of Nuclear Materials, 329-333(Part1), p.1093 - 1097, 2004/08

 Times Cited Count:6 Percentile:40.72(Materials Science, Multidisciplinary)

In several institutes, research and development for an accelerator-driven spallation neutron source have been progressed. A beam window of a target will be subjected to proton/neutron irradiation, pressure wave and thermal stresses accompanied by high-energy proton beam injection. To obtain the irradiation data, the SINQ target irradiation program (STIP) at Paul Scherrer Institute (PSI) has been progressing. JAERI takes part in STIP and shares the PIE work. The STIP specimens are very small so that we developed a new fatigue-testing machine with ceramic piezoelectric actuator. The results showed that the numbers of cycles to failure (Nf) on the irradiated specimens were less than that of unirradiated specimens. Dpa dependence of Nf was not clearly seen in the irradiation conditions. On the other hand, fracture surface varied with irradiation conditions. Specimens irradiated at low temperature fractured in ductile manner. However, interglanular fractured surface was observed for 316F SS irradiated up to 12.5 dpa at 360$$^{circ}$$C.

Journal Articles

Analysis of failure caused by cosmic rays in high-voltage high-power semiconductor devices, 2

Matsuda, Hideo*; Omura, Ichiro*; Sakiyama, Yoko*; Urano, Satoshi*; Iesaka, Susumu*; Ohashi, Hiromichi*; Hirao, Toshio; Abe, Hiroshi; Ito, Hisayoshi; Mori, Hidenobu; et al.

JAERI-Review 2002-035, TIARA Annual Report 2001, p.11 - 13, 2002/11

no abstracts in English

Journal Articles

Vacancy-hydrogen interaction in proton-implanted Si studied by positron lifetime and infrared absorption measurements

Kawasuso, Atsuo; Arai, H.*; Okada, Sohei

Mater. Sci. Forum, 255-257, p.548 - 550, 1997/00

no abstracts in English

Journal Articles

Proton irradiation effects on effective activation energies of QMG-YBCO

Okayasu, Satoru; *

Proc. of 9th Int. Symp. on Superconductivity, 0, p.507 - 510, 1997/00

no abstracts in English

Journal Articles

High energy ion irradiation effects on polymer materials, 2; Proton irradiation effects on PMMA and GFRP

Kudo, Hisaaki; Sasuga, Tsuneo; Seguchi, Tadao; Katsumura, Yosuke*

Polymer, 37(21), p.4663 - 4665, 1996/10

 Times Cited Count:21 Percentile:65.04(Polymer Science)

no abstracts in English

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